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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
September 2009
MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers
Features
UL recognized (File # E90700, Vol. 2) IEC60747-5-2 recognized (File # 102497)
Description
The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
- Add option V (e.g., MCT2VM)
Applications
Power supply regulators Digital logic inputs Microprocessor inputs
Schematic
Anode 1 6 Base
Package Outlines
Cathode 2
5 Collector
No Connection 3
4 Emitter
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF VR IF(pk) PD DETECTOR IC VCEO PD Collector Current Storage Temperature
Parameter
Value
-40 to +150 -40 to +100 260 for 10 sec 250 2.94 60 3 3 120 1.41 50 30 150 1.76
Units
C C C mW mW/C mA V A mW mW/C mA V mW mW/C
Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25C Derate above 25C DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (300s, 2% Duty Cycle) LED Power Dissipation @ TA = 25C Derate above 25C
Collector-Emitter Voltage Detector Power Dissipation @ TA = 25C Derate above 25C
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
Electrical Characteristics (TA = 25C unless otherwise specified)
Individual Component Characteristics Symbol
EMITTER VF Input Forward Voltage IF = 20mA MCT2M MCT2EM MCT271M MCT210M MCT2M MCT2EM MCT271M MCT210M ALL MCT210M MCT2M MCT2EM MCT271M MCT210M MCT2M MCT2EM MCT271M MCT210M ALL ALL ALL 8 70 120 V 30 100 V 1.25 1.50 V
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Units
TA = 0C-70C, IF = 40mA IR Reverse Leakage Current VR = 3.0V
1.33 0.001 10 A
TA = 0C-70C, VR = 6.0V DETECTOR BVCEO BVCBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage IC = 1.0mA, IF = 0 TA = 0C-70C IC = 10A, IF = 0
TA = 0C-70C BVECO Emitter-Collector Breakdown Voltage IE = 100A, IF = 0
30 7 10 V
TA = 0C-70C ICEO ICBO CCE Collector-Emitter Dark Current Collector-Base Dark Current Capacitance VCE = 10V, IF = 0 VCE = 5V, TA = 0C-70C VCB = 10V, IF = 0 VCE = 0V, f = 1MHz
6
10 1 50 30 20 nA A nA pF
*All typical TA = 25C
Isolation Characteristics Symbol
VISO RISO CISO
Parameter
Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec. VI-O = 500 VDC
Min
7500 1011
Typ*
Max
Units
Vac(pk)
0.2
2
pF
*All typicals at TA = 25C
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
Electrical Characteristics (Continued) (TA = 25C unless otherwise specified)
Transfer Characteristics
Symbol
CTR
Parameter
Output Collector Current
Test Conditions
TA = 0C-70C IF = 10mA, VCE = 10V
Device
MCT210M MCT2M MCT2EM MCT271M MCT210M MCT2M MCT2EM MCT271M MCT210M
Min.
150 20 45 50
Typ.*
Max.
Unit
%
DC CHARACTERISTICS
90
IF = 3.2mA to 32mA, VCE = 0.4V, TA = 0C-70C VCE(SAT) Collector-Emitter Saturation Voltage IC = 2mA, IF = 16mA
0.4
V
IC = 16mA, IF = 32mA, TA = 0C-70C AC CHARACTERISTICS ton AC Characteristic Saturated Turn-on Time from 5V to 0.8V IF = 15mA, VCC = 5V, RL = 2k, RB = Open (Fig. 11) IF = 20mA, VCC = 5 V, RL = 2k, RB = 100k) (Fig. 11) toff Saturated Turn-off Time from SAT to 2.0 V IF = 15mA, VCC = 5V, RL = 2k, RB = Open (Fig. 11) IF = 20mA, VCC = 5V, RL = 2k, RB = 100k (Fig. 11) ton toff tr tf ton toff Turn-on Time Turn-off Time Rise Time Fall Time Saturated turn-on time Saturated turn-off time (Approximates a typical TTL interface) Saturated turn-on time Saturated turn-off time (Approximates a typical low power TTL interface) Saturated rise time Saturated fall time Saturated propagation delay - HIGH to LOW Saturated propagation delay - LOW to HIGH Non-saturated rise time Non-saturated fall time Non-saturated turn-on time Non-saturated turn-off time IC = 2mA, VCC = 5V, RL = 100 (Fig. 11) IC = 2mA, VCC = 5V, RL = 100 (Fig. 20) IF = 10mA, VCC = 10V, RL = 100 IF = 10mA, VCC = 10V, RL = 100 IF = 10mA, VCC = 10V, RL = 100 IF = 10mA, VCC = 10V, RL = 100 IF = 16mA, RL = 1.9k, VCC = 5V (Fig. 11)
MCT2M MCT2EM MCT2M MCT2EM MCT2M MCT2EM MCT2M MCT2EM MCT2M MCT2EM MCT2M MCT2EM MCT2M MCT2EM MCT2M MCT2EM MCT271M
1.1 1.3 50 20 2 2 2 1.5 1.0 48
s
s
s s s s s s
ton toff
IF = 16mA, RL = 4.7k, VCC = 5 V (Fig. 20)
MCT271M
1.0 98
s s
tr tf TPD (HL) TPD (LH) tr tf ton toff
IF = 16mA, RL = 560, VCC = 5V) (Fig. 11, 12) IF = 16mA, RL = 2.7k (Fig. 11, 12)
MCT210M
1.0 11 1.0 50
s s s s s s 7 7 s s
MCT210M
MCT210M MCT271M
2 2 2 2
*All typicals at TA = 25C
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 www.fairchildsemi.com 4
MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms For Rated Main voltage < 300Vrms Climatic Classification Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV I-IV 55/100/21 2 175 1594 Vpeak
CTI VPR
Comparative Tracking Index Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC
1275
Vpeak
VIORM VIOTM
Max. Working Insulation Voltage Highest Allowable Over Voltage External Creepage External Clearance Insulation Thickness
850 6000 7 7 0.5 109
Vpeak Vpeak mm mm mm
RIO
Insulation Resistance at Ts, VIO = 500V
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
1.8 1.6 VCE = 5.0V TA = 25C Normalized to IF = 10mA
Fig. 2 Normalized CTR vs. Forward Current
1.7
1.4
VF - FORWARD VOLTAGE (V)
1.6
1.2
NORMALIZED CTR
1.5
1.0
1.4 TA = 55C 1.3 TA = 25C 1.2 TA = 100C 1.1
0.8
0.6
0.4
0.2
1.0 1 10 100
0.0 0 2 4 6 8 10 12 14 16 18 20
IF - LED FORWARD CURRENT (mA)
IF - FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4 1.0
Fig. 4 CTR vs. RBE (Unsaturated)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
0.9 0.8
IF = 20mA IF = 10mA
1.2 IF = 5mA
0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE = 5.0V 0.0 IF = 5mA
NORMALIZED CTR
1.0 IF = 10mA 0.8
0.6
IF = 20mA
0.4
Normalized to IF = 10mA TA = 25C -60 -40 -20 0 20 40 60 80 100
0.2 10 100 1000
TA - AMBIENT TEMPERATURE (C)
RBE - BASE RESISTANCE (k)
VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 5 CTR vs. RBE (Saturated)
1.0
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
100
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
0.9 VCE= 0.3V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 1000 IF = 5mA IF = 10mA IF = 20mA
TA = 25C 10
1
IF = 2.5mA 0.1
0.01 IF = 5mA IF = 10mA
IF = 20mA
RBE - BASE RESISTANCE (k)
0.001 0.01
0.1
1
10
IC - COLLECTOR CURRENT (mA)
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
Typical Performance Curves (Continued)
Fig. 7 Switching Speed vs. Load Resistor
1000 IF = 10mA VCC = 10V TA = 25C 100 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.1 1 10 100 10 100 1000 10000 100000
Fig. 8 Normalized ton vs. RBE
10
Toff
Tf
Ton
1
Tr
0.1
NORMALIZED ton - (ton(RBE) / ton(open))
VCC = 10V IC = 2mA RL = 100
SWITCHING SPEED (s)
R - LOAD RESISTOR (k)
RBE - BASE RESISTANCE (k)
Fig. 9 Normalized toff vs. RBE
1.4 1.3
Fig. 10 Dark Current vs. Ambient Temperature
10000
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
VCE = 10 V TA = 25C 1000
NORMALIZED toff - (toff(RBE) / toff(open))
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 100 1000 10000 100000 VCC = 10V IC = 2mA RL = 100
100
10
1
0.1
0.01
0.001 0 20 40 60 80 100
RBE - BASE RESISTANCE (k)
TA - AMBIENT TEMPERATURE (C)
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
Typical Electro-Optical Characteristics
TEST CIRCUIT
VCC = 10V
INPUT PULSE
WAVE FORMS
IF INPUT RBE
IC
RL
10% 90% tr ton Adjust IF to produce IC = 2mA tf toff OUTPUT PULSE
OUTPUT
Figure 11. Switching Time Test Circuit and Waveforms
INPUT TPDHL OUTPUT (SATURATED) TPDLH 5V
1.5 V
1.5 V SAT
Figure 12. Switching Time Waveforms (MCT210M)
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
Package Dimensions
Through Hole
8.13-8.89
6 4 6
0.4" Lead Spacing
8.13-8.89
4
6.10-6.60 6.10-6.60
Pin 1
1
3
Pin 1 5.08 (Max.) 3.28-3.53 0.25-0.36
1
3
7.62 (Typ.)
5.08 (Max.) 3.28-3.53
0.25-0.36
0.38 (Min.)
2.54-3.81 0.38 (Min.) 0.20-0.30 2.54-3.81
(0.86) 0.41-0.51 1.02-1.78 0.76-1.14
2.54 (Bsc)
15 (Typ.) (0.86) 0.41-0.51 1.02-1.78 0.76-1.14 10.16-10.80 2.54 (Bsc) 0.20-0.30
Surface Mount
8.13-8.89
6 4
(1.78) (1.52) (2.54)
6.10-6.60 8.43-9.90
(7.49) (10.54)
1
3
Pin 1
(0.76)
Rcommended Pad Layout
0.25-0.36
3.28-3.53 5.08 (Max.) 0.38 (Min.) 2.54 (Bsc) (0.86) 0.41-0.51 1.02-1.78 0.76-1.14 0.16-0.88 (8.13)
0.20-0.30
Note: All dimensions in mm.
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
Ordering Information
Option
No suffix S SR2 T V TV SV SR2V
Order Entry Identifier (Example)
MCT2M MCT2SM MCT2SR2M MCT2TM MCT2VM MCT2TVM MCT2SVM MCT2SR2VM Surface Mount Lead Bend
Description
Standard Through Hole Device (50 units per tube) Surface Mount; Tape and Reel (1,000 units per reel) 0.4" Lead Spacing IEC60747-5-2 IEC60747-5-2, 0.4" Lead Spacing IEC60747-5-2, Surface Mount IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel)
Marking Information
1
MCT2 V
3 4
2 6
X YY Q
5
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) One digit year code, e.g., `7' Two digit work week ranging from `01' to `53' Assembly package code
*Note - Parts that do not have the `V' option (see definition 3 above) that are marked with date code `325' or earlier are marked in portrait format.
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
Carrier Tape Specification
12.0 0.1 4.5 0.20 2.0 0.05 0.30 0.05 4.0 0.1 O1.5 MIN 1.75 0.10
11.5 1.0 21.0 0.1 9.1 0.20 24.0 0.3
0.1 MAX
10.1 0.20
O1.5 0.1/-0
User Direction of Feed
Reflow Profile
300 280 260 240 220 200 180 Time above 183C = 90 Sec >245C = 42 Sec 260C
C
160 140 120 100 80 60 40 20 0 0 60 120 180 33 Sec 1.822C/Sec Ramp up rate
270
360
Time (s)
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers
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Rev. I40
(c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
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